Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology
نویسندگان
چکیده
We present a comprehensive study on a high reliability RF-MEMS switch with an active thermal recovery capability to counteract stiction. Applying finite element (FE) simulations we investigate the complete recovery process including mechanical, electrical, thermal and fluidic effects. The experimentally calibrated thermo-mechanical FE-model is used to extract key parameters of the recovery process. Therewith we are able to estimate the efficiency of the recovery capability and to figure out possible design improvements in order to optimize the investigated switch with respect to reliability. 2012 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 52 شماره
صفحات -
تاریخ انتشار 2012